Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun
- Issue Date
- 1-1월-2011
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.109, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 109
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/113295
- DOI
- 10.1063/1.3525991
- ISSN
- 0021-8979
- Abstract
- The effect of hydrogen-postannealing on the endurance and data retention characteristics of an Au/Si3N4/Ti resistance memory cell is investigated. Compared to the as-deposited sample, the set and reset currents of the Au/Si3N4/Ti sample annealed at 250 degrees C for 30 min in a N-2-H-2 ambient gas, are reduced from 10 mA to 1.5 mA and from 3 mA to 5 mu A, respectively, whereas the current ratio increases from similar to 0.5x10(1) to similar to 10(3). In addition, its reliability features, including its endurance (>10(3) cycles) and retention time (>ten years), have been improved due to the reduction in the interface trap. (C) 2011 American Institute of Physics. [doi:10.1063/1.3525991]
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