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Characterization of dual floating gate memory devices constructed on glass
- Authors
- Kim, Sungsu; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 1월-2011
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Aluminum nanoparticles; Dual-floating gate memory; 2-bit operation
- Citation
- SOLID STATE COMMUNICATIONS, v.151, no.2, pp.151 - 154
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 151
- Number
- 2
- Start Page
- 151
- End Page
- 154
- ISSN
- 0038-1098
- Abstract
- The performance of dual floating gate memory devices constructed on glass is examined in this study. The dual floating gate memory device is composed of a ZnO transistor with a bottom-gate oxide layer whose two laterally separated regions are embedded with Al nanoparticles. For the memory device, four different states are achieved through Fowler-Nordheim (F-N) tunneling and channel hot electron (CHE) injection. Each of these four different states is distinguished by a difference of about 0.5 V in the threshold voltage shift. A detailed description on the four-state operation is given in this paper. (C) 2010 Elsevier Ltd. All rights reserved.
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