Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
- Authors
- Park, Byoungjun; Cho, Kyoungah; Kim, Sungsu; Kim, Sangsig
- Issue Date
- 2011
- Publisher
- SPRINGER
- Keywords
- Flexible devices; Low temperature; Nanoparticles; Non-volatile memory; Thin-film transistors
- Citation
- NANOSCALE RESEARCH LETTERS, v.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/115071
- DOI
- 10.1007/s11671-010-9789-5
- ISSN
- 1931-7573
- Abstract
- Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm(2)/V.s and their on/off ratio was in the range of 10(4)-10(5). The threshold voltages of the programmed and erased states were negligibly changed up to 10(3) cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
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