Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Surface characteristics of parylene-C films in an inductively coupled O-2/CF4 gas plasma
- Authors
- Ham, Yong-Hyun; Shutov, Dmitriy Alexandrovich; Baek, Kyu-Ha; Do, Lee-Mi; Kim, Kwangsoo; Lee, Chi-Woo; Kwon, Kwang-Ho
- Issue Date
- 1-Sep-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Parylene-C; O-2/CF4 plasma; Surface characteristics
- Citation
- THIN SOLID FILMS, v.518, no.22, pp 6378 - 6381
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 518
- Number
- 22
- Start Page
- 6378
- End Page
- 6381
- ISSN
- 0040-6090
1879-2731
- Abstract
- In this article, we report the results obtained from a study carried out on the inductively coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using an O-2/CF4 gas mixture. The effects of adding CF4 to the O-2 plasma on the etch rates were investigated. As the CF4 gas fraction increases up to approximately 16%, the polymer etch rate increases in the range of 277-373 nm/min. In this work, the atomic force microscopy (AFM) analysis indicated that the surface roughness was reduced by the addition of CF4 to the O-2 plasma. Contact angle measurements showed that the surface energy decreases with increasing CF4 fraction. At the same time. X-ray photoelectron spectroscopy (XPS) demonstrated the increase in the relative F atomic content on the surface. (C) 2010 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kwon, Kwang Ho
- Department of Control and Instrumentation Engineering