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Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes
- Issue Date
- Apr-2010
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Improvement; HEMTs; Ti/Al/Ti/Ni/Au; Ohmic contact; DC performance
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.4, pp.1287 - 1290
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 56
- Number
- 4
- Start Page
- 1287
- End Page
- 1290
- ISSN
- 0374-4884
- Abstract
- We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 x 10(-7) Omega cm(2), 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)