Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma
DC Field | Value | Language |
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dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Ham, Yong-Hyun | - |
dc.contributor.author | Min, Nam Ki | - |
dc.contributor.author | Lee, Hyun Woo | - |
dc.contributor.author | Hong, Mun Pyo | - |
dc.contributor.author | Kim, Kwangsoo | - |
dc.date.accessioned | 2021-09-08T06:01:02Z | - |
dc.date.available | 2021-09-08T06:01:02Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/117230 | - |
dc.description.abstract | The investigations of etch characteristics and mechanisms for indium tin oxide (In(2)O(3))(0.9):(SnO(2))(0.1) (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3256226] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | PARAMETERS | - |
dc.subject | DISCHARGE | - |
dc.subject | DENSITY | - |
dc.subject | RECOMBINATION | - |
dc.subject | POLYSILICON | - |
dc.subject | FLUORINE | - |
dc.subject | MODEL | - |
dc.subject | HCL | - |
dc.subject | O-2 | - |
dc.title | Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.contributor.affiliatedAuthor | Min, Nam Ki | - |
dc.contributor.affiliatedAuthor | Hong, Mun Pyo | - |
dc.identifier.doi | 10.1116/1.3256226 | - |
dc.identifier.scopusid | 2-s2.0-73849132467 | - |
dc.identifier.wosid | 000273182800003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.28, no.1, pp.11 - 15 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 28 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 11 | - |
dc.citation.endPage | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | DISCHARGE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | RECOMBINATION | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | FLUORINE | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | HCL | - |
dc.subject.keywordPlus | O-2 | - |
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