Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma
- Authors
- Kwon, Kwang-Ho; Efremov, Alexander; Ham, Yong-Hyun; Min, Nam Ki; Lee, Hyun Woo; Hong, Mun Pyo; Kim, Kwangsoo
- Issue Date
- 1월-2010
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.28, no.1, pp.11 - 15
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 28
- Number
- 1
- Start Page
- 11
- End Page
- 15
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/117230
- DOI
- 10.1116/1.3256226
- ISSN
- 0734-2101
- Abstract
- The investigations of etch characteristics and mechanisms for indium tin oxide (In(2)O(3))(0.9):(SnO(2))(0.1) (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%-100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3256226]
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
- College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Applied Physics > 1. Journal Articles
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