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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
- Authors
- Kim, Hong-Yeol; Kim, Jihyun; Ren, F.; Jang, Soohwan
- Issue Date
- Jan-2010
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- annealing; deep levels; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; neutron effects; quantum well devices; wide band gap semiconductors
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.28, no.1, pp.27 - 29
- Indexed
- SCIE
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 28
- Number
- 1
- Start Page
- 27
- End Page
- 29
- ISSN
- 1071-1023
- Abstract
- InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5x10(11) cm(-2) neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
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