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Proton irradiation effects on Sb-based heterojunction bipolar transistors
- Authors
- Lo, C. F.; Kim, H. -Y.; Kim, J.; Chen, Shu-Han; Wang, Sheng-Yu; Chyi, Jen-Inn; Chou, B. Y.; Chen, K. H.; Wang, Y. L.; Chang, C. Y.; Pearton, S. J.; Kravchenko, L. I.; Jang, S.; Ren, F.
- Issue Date
- Nov-2009
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; III-V semiconductors; indium compounds; proton effects
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.27, no.6, pp L33 - L37
- Indexed
- SCIE
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 27
- Number
- 6
- Start Page
- L33
- End Page
- L37
- ISSN
- 1071-1023
2166-2746
- Abstract
- In0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2x10(11) to 2x10(15) protons/cm(2). The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2x10(11) cm(-2), which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.
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