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N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
- Authors
- Jang, Jaewon; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig
- Issue Date
- Oct-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- HgSe nanocrystals; Thin-film transistor; UV/ozone treatment; Flexible device
- Citation
- MICROELECTRONIC ENGINEERING, v.86, no.10, pp.2030 - 2033
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 86
- Number
- 10
- Start Page
- 2030
- End Page
- 2033
- ISSN
- 0167-9317
- Abstract
- We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 degrees C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm(2)/VS and an on/off current ratio of about 10(2). In addition, the electrical characteristics of the TFT on bent substrates are briefly described. (C) 2009 Elsevier B.V. All rights reserved.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)