Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl-2/Ar Plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ham, Yong-Hyun | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Min, Nam-Ki | - |
dc.contributor.author | Lee, Hyun Woo | - |
dc.contributor.author | Yun, Sun Jin | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-08T14:54:06Z | - |
dc.date.available | 2021-09-08T14:54:06Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119515 | - |
dc.description.abstract | A study on both etching characteristics and mechanism Of VO2 thin films in the Cl-2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700W) at fixed bias power of 150 W and initial mixture composition of 25% Cl-2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux. (C) 2009 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | METAL-INSULATOR-TRANSITION | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | ELECTRON TEMPERATURES | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | GLOBAL-MODEL | - |
dc.title | Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl-2/Ar Plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Nam-Ki | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1143/JJAP.48.08HD04 | - |
dc.identifier.scopusid | 2-s2.0-77952677690 | - |
dc.identifier.wosid | 000269497800009 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.8 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | ELECTRON TEMPERATURES | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordAuthor | Etching Characteristics | - |
dc.subject.keywordAuthor | VO2 Thin Films | - |
dc.subject.keywordAuthor | Inductively Coupled Cl2/Ar Plasma | - |
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