Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl-2/Ar Plasma
- Authors
- Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho
- Issue Date
- 8월-2009
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Etching Characteristics; VO2 Thin Films; Inductively Coupled Cl2/Ar Plasma
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 48
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119515
- DOI
- 10.1143/JJAP.48.08HD04
- ISSN
- 0021-4922
- Abstract
- A study on both etching characteristics and mechanism Of VO2 thin films in the Cl-2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700W) at fixed bias power of 150 W and initial mixture composition of 25% Cl-2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux. (C) 2009 The Japan Society of Applied Physics
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.