Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Visualization of local gate control in a ZnO inter-nanowire junction device
- Authors
- Lim, Jin-Hyung; Ji, Hyun Jin; Jung, Goo-Eun; Chung, Kyung Hoon; Kim, Gyu-Tae; Ha, Jeong Sook; Park, Ji-Yong; Kahng, Se-Jong
- Issue Date
- Mar-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nanowire; Scanning gate microscopy; Atomic force microscopy
- Citation
- SOLID-STATE ELECTRONICS, v.53, no.3, pp.320 - 323
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 53
- Number
- 3
- Start Page
- 320
- End Page
- 323
- ISSN
- 0038-1101
- Abstract
- Electronic transport behavior of a ZnO inter-nanowire junction transistor was studied with atomic force microscopy (AFM) and scanning gate microscopy. Source-drain currents exhibit strong dependences on gate voltage, applied by a movable local gate. Noticeable local gating was observed when the tip is above the junction area of the inter-nanowire device, demonstrating that active region in the device is confined. Transport mechanism in the device was understood in terms of band bending by electronic doping. Our device structure is analogous to that of two ZnO grains separated by an insulating layer in polycrystalline varistor devices. (C) 2009 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Gyu Tae
- College of Engineering (School of Electrical Engineering)