Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides
- Authors
- Park, Byoungjun; Cho, Kyoungah; Yun, Junggwon; Koo, Yong-Seo; Lee, Jong-Ho; Kim, Sangsig
- Issue Date
- Mar-2009
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Titanium; Nanoparticles; Memory; Al2O3; High-k
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.3, pp.1904 - 1908
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 9
- Number
- 3
- Start Page
- 1904
- End Page
- 1908
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120550
- DOI
- 10.1166/jnn.2009.438
- ISSN
- 1533-4880
- Abstract
- The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al2O3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles. The counterclockwise hysteresis and flat-band voltage shift observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the Ti nanoparticles present between the tunneling oxide and control oxide layers in the MOS capacitor and that these stored electrons originate from the p-type Si substrate in inversion condition. Moreover, the source/drain current versus gate voltage curves for the Ti nanoparticle-embedded MOSFETs and the threshold voltage shift characteristics of program/erase time, endurance and retention are analyzed in this paper.
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