On the Effect of Oxygen on the Etch Behavior of ZrO2 in an Inductively Coupled BCl3/O-2 Plasma
- Authors
- Efremov, Alexander; Min, Nam-Ki; Kwon, Kwang-Ho; Yun, Sun Jin; Lee, Hyun Woo; Hong, Munpyo
- Issue Date
- 10월-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZrO2; Etch rate; Dissociation kinetics; Etch mechanism; BCl3/O-2 plasma
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.4, pp.1931 - 1938
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 4
- Start Page
- 1931
- End Page
- 1938
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122637
- ISSN
- 0374-4884
- Abstract
- An investigation of ZrO2 etch behavior and mechanisms in a BCl3/O-2 inductively coupled plasma was carried out. An increase in the O-2 mixing ratio of up to 20 % was found to accelerate the ZrO2 etch rate, but to lower the ZrO2/SiO2 and the ZrO2/Si etch selectivities. Langmuir probe diagnostics was used to determine the effect of oxygen addition on the plasma parameters. Zero-dimensional plasma modeling indicated that both the formation kinetics and the densities of Cl atoms could be sufficiently influenced by the oxidative dissociation of BClx. From a model-based analysis of the etch kinetics, we showed that the experimentally mentioned behavior of the ZrO2 etch rate could result from an increase in the Cl atom density, but required a reaction-rate-limited etch process.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
- Graduate School > Department of Applied Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.