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Passivation of semi-insulating polycrystalline CdZnTe films
- Authors
- Kim, Ki Hyun; Won, Jae Ho; Cho, Shin Hang; Suh, Jong Hee; Cho, Pyong Kon; Hong, Jinki; Kim, Sun Ung; Han, You Ree
- Issue Date
- 7월-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- sulfur passivation; leakage current; CdTeS; heterojunction; semi-insulating CdZnTe; inter-pixel resistance; 1/f noise
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.317 - 321
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 1
- Start Page
- 317
- End Page
- 321
- ISSN
- 0374-4884
- Abstract
- Surface effects play an important role in the overall performance of X-ray detector. The effects of passivation with (NH4)(2)S on semi-insulating polycrystalline CdZnTe thick films were analyzed with X-ray photoelectron spectroscopy (XPS), photoconductive decay (PCD), noise power spectrum and pulse height spectra measurements. Sulfur passivation with (HN4)(2)S effectively removes the Te-oxide layers on the CdZnTe surface, reduces the surface leakage current and gives higher energy resolution by suppressing 1/f noise.
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Related Researcher
- Hong, Jin Ki
- 과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)