Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 mu m wavelength light

Abstract

The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 mu m wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 mu A in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.