Model-based analysis of the ZrO2 etching mechanism in inductively coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
- Authors
- Kim, Mansu; Min, Nam-Ki; Yun, Sun Jin; Lee, Hyun Woo; Efremov, Alexander M.; Kwon, Kwang-Ho
- Issue Date
- 6월-2008
- Publisher
- WILEY
- Keywords
- ZrO2; etch rate; dissociation; ionization; etch mechanism; BCl3/Ar and BCl3/CHF3/Ar plasma modeling
- Citation
- ETRI JOURNAL, v.30, no.3, pp.383 - 393
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- ETRI JOURNAL
- Volume
- 30
- Number
- 3
- Start Page
- 383
- End Page
- 393
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123438
- DOI
- 10.4218/etrij.08.0107.0206
- ISSN
- 1225-6463
- Abstract
- The etching mechanism of ZrO2 thin films and etch selectivity over some materials in both BCl3/Ar and BCl3/CBY3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, BCl2, and BCl2+. In this work, it is shown that the non-monotonic behavior of the ZrO2 etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% CHF3 to the BCl3-rich BCl3/Ar plasma does not influence the ZrO2 etch rate, but it non-monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.
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Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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