Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3/He inductively coupled plasma
- Authors
- Kim, Mansu; Min, Nam-Ki; Yun, Sun Jin; Lee, Hyun Woo; Efremov, Alexander; Kwon, Kwang-Ho
- Issue Date
- 5월-2008
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.26, no.3, pp.344 - 351
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 26
- Number
- 3
- Start Page
- 344
- End Page
- 351
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123637
- DOI
- 10.1116/1.2891255
- ISSN
- 0734-2101
- Abstract
- This article reports a study carried out on a model-based analysis of the etch mechanism for ZrO2 thin films in a BCl3/He inductively coupled plasma. It was found that an increase in the He mixing ratio at a fixed gas pressure and input power results in an increase in the ZrO2 etch rate, which changes from 36 to 57 nm/min for 0-83% He. Langmuir probe diagnostics and zero-dimensional plasma modeling indicated that both plasma parameters and active species kinetics were noticeably influenced by the initial composition of the BCl3/He mixture, resulting in the nonmonotonic or nonlinear behaviors of species densities. Using the model-based analysis of etch kinetics, it was demonstrated that the behavior of the ZrO2 etch rate corresponds to the ion-flux-limited etch regime of the ion-assisted chemical reaction. (c) 2008 American Vacuum Society.
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Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
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