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Electrical properties and X-ray spectrum of semi-insulating CdZnTe : Pb crystals
- Authors
- Won, J. H.; Kim, K. H.; Cho, S. H.; Suh, J. H.; Hong, J. K.; Kim, S. U.
- Issue Date
- 21-2월-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- CdZnTe : Pb; X-ray detector; X-ray spectrum
- Citation
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.586, no.2, pp.211 - 214
- Indexed
- SCIE
SCOPUS
- Volume
- 586
- Number
- 2
- Start Page
- 211
- End Page
- 214
- ISSN
- 0168-9002
- Abstract
- High purity Pb-doped CdZnTe single crystals were grown by using the vertical Bridgman method. Their electrical properties and X-ray spectrum were investigated. The doping concentration of Pb was about 1 x 10(19) cm(-3). The resistivity of Pb-doped CdZnTe single crystal was 2 x 10(9) Omega cm. The temperature dependence of the resistivity of these crystals was examined between the region of 200 and 300 K. The plot of log(p) versus 1000/T was represented by a straight line with a slope of 380 meV. From the PL spectrum, we have confirmed that type conversion from p to n-type conductivity originated from the compensation process of Cd vacancies, which are the most abundant acceptors in CdZnTe. Also, the effects of Pb-doping on the mobility and X-ray spectra were studied by time-of-flight (TOF) and Am-241 spectrum measurements. (C) 2008 Published by Elsevier B.V.
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Related Researcher
- Hong, Jin Ki
- 과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)