Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique
- Authors
- Sahoo, Trilochan; Kang, Eun-Sil; Kim, Myoung; Kannan, Vasudevan; Yu, Yeon-Tae; Shin, Dong-Chan; Kim, Tae-Geun; Lee, In-Hwan
- Issue Date
- 1-2월-2008
- Publisher
- ELSEVIER
- Keywords
- crystal structure; X-ray diffraction; hydrothermal crystal growth; thin film; zinc compounds; semiconducting II-VI materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.310, no.3, pp.570 - 574
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 310
- Number
- 3
- Start Page
- 570
- End Page
- 574
- ISSN
- 0022-0248
- Abstract
- Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0001) by single-step hydrothermal route at a low temperature of 90 degrees C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0001) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [11 (2) over bar0](ZnO)parallel to[11 (2) over bar0](GaN). Sharp luminescence peak centered at 377nm due to excitonic recombination from ZnO thin film was observed. (C) 2007 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.