On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma
DC Field | Value | Language |
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dc.contributor.author | Kim, Mansu | - |
dc.contributor.author | Min, Nam-Ki | - |
dc.contributor.author | Yun, Sun Jin | - |
dc.contributor.author | Lee, Hyun Woo | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-09T11:31:11Z | - |
dc.date.available | 2021-09-09T11:31:11Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008-02 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124130 | - |
dc.description.abstract | The etching mechanism of ZrO2, thin films in BCl3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO2, etch rate which reaches a maximum of 41.4 nm/min at about 30-35% Ar. Langmuir probe measurements and plasma modeling indicated the noticeable influence of a BCl3/Ar mixture composition on plasma parameters and active species kinetics that results in non-linear changes of both densities and fluxes for Cl. BCl2, and BCl2+. From the model-based analysis of surface kinetics, it was shown that the non-monotonic behavior of the ZrO2, etch rate can be associated with the concurrence of chemical and physical pathways in ion-assisted chemical reaction. (c) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | DIELECTRIC-CONSTANT MATERIALS | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | ELECTRON TEMPERATURES | - |
dc.subject | ZIRCONIUM-OXIDE | - |
dc.subject | SILICON | - |
dc.subject | DIAGNOSTICS | - |
dc.subject | SIMULATION | - |
dc.subject | CL-2 | - |
dc.title | On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Nam-Ki | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.mee.2007.07.009 | - |
dc.identifier.scopusid | 2-s2.0-40249108240 | - |
dc.identifier.wosid | 000253030300018 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.85, no.2, pp.348 - 354 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 85 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 348 | - |
dc.citation.endPage | 354 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIELECTRIC-CONSTANT MATERIALS | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | ELECTRON TEMPERATURES | - |
dc.subject.keywordPlus | ZIRCONIUM-OXIDE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DIAGNOSTICS | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | CL-2 | - |
dc.subject.keywordAuthor | ZrO2 | - |
dc.subject.keywordAuthor | etch rate | - |
dc.subject.keywordAuthor | dissociation | - |
dc.subject.keywordAuthor | ionization | - |
dc.subject.keywordAuthor | etch mechanism | - |
dc.subject.keywordAuthor | BCl3/Ar plasma modeling | - |
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