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On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma

Authors
Kim, MansuMin, Nam-KiYun, Sun JinLee, Hyun WooEfremov, AlexanderKwon, Kwang-Ho
Issue Date
2월-2008
Publisher
ELSEVIER
Keywords
ZrO2; etch rate; dissociation; ionization; etch mechanism; BCl3/Ar plasma modeling
Citation
MICROELECTRONIC ENGINEERING, v.85, no.2, pp.348 - 354
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
85
Number
2
Start Page
348
End Page
354
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/124130
DOI
10.1016/j.mee.2007.07.009
ISSN
0167-9317
Abstract
The etching mechanism of ZrO2, thin films in BCl3/Ar plasma was investigated using a combination of experimental and modeling methods. It was found that an increase in the Ar mixing ratio causes the non-monotonic behavior of the ZrO2, etch rate which reaches a maximum of 41.4 nm/min at about 30-35% Ar. Langmuir probe measurements and plasma modeling indicated the noticeable influence of a BCl3/Ar mixture composition on plasma parameters and active species kinetics that results in non-linear changes of both densities and fluxes for Cl. BCl2, and BCl2+. From the model-based analysis of surface kinetics, it was shown that the non-monotonic behavior of the ZrO2, etch rate can be associated with the concurrence of chemical and physical pathways in ion-assisted chemical reaction. (c) 2007 Elsevier B.V. All rights reserved.
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