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Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals
- Authors
- Jang, Jaewon; Cho, Kyoungah; Lee, Sang Heon; Kim, Sangsig
- Issue Date
- 9-Jan-2008
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.19, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 19
- Number
- 1
- ISSN
- 0957-4484
- Abstract
- Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)