Etch mechanism of Ba(2)Ti(9)O(20) dielectric thin film in inductively coupled Cl(2)/Ar plasma
DC Field | Value | Language |
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dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Kim, Mansu | - |
dc.contributor.author | Min, Nam-Ki | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-09T16:51:16Z | - |
dc.date.available | 2021-09-09T16:51:16Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/125626 | - |
dc.description.abstract | An investigation of the Ba(2)Ti(9)O(20) (BTO) thin-film etch characteristics and mechanism in the Cl(2)/Ar inductively coupled plasma was carried out. The BTO etch rate as well as the BTO/Pt etch selectivity were measured as functions of Cl(2)/Ar mixing ratio (0-100% Ar), gas pressure (4-10 mTorr), input power (400-700 W), and bias power (50-300 W). A combination of plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided the information on plasma parameters, gas-phase compositions, and fluxes of active species on the etched surface. It was found that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, when the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low volatile reaction products. (c) 2008 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | CONSISTENT GLOBAL-MODEL | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | ELECTRON TEMPERATURES | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | CL-2-AR PLASMAS | - |
dc.subject | CERAMICS | - |
dc.subject | POLYSILICON | - |
dc.subject | DISCHARGES | - |
dc.subject | BATI4O9 | - |
dc.title | Etch mechanism of Ba(2)Ti(9)O(20) dielectric thin film in inductively coupled Cl(2)/Ar plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Nam-Ki | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1149/1.2899005 | - |
dc.identifier.scopusid | 2-s2.0-43049096446 | - |
dc.identifier.wosid | 000255524100036 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.6, pp.D468 - D473 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | D468 | - |
dc.citation.endPage | D473 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | CONSISTENT GLOBAL-MODEL | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | ELECTRON TEMPERATURES | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | CL-2-AR PLASMAS | - |
dc.subject.keywordPlus | CERAMICS | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | BATI4O9 | - |
dc.subject.keywordAuthor | Ba2Ti9O20 | - |
dc.subject.keywordAuthor | etch rate | - |
dc.subject.keywordAuthor | dissociation | - |
dc.subject.keywordAuthor | ionization | - |
dc.subject.keywordAuthor | etch mechanism | - |
dc.subject.keywordAuthor | Cl2/Ar plasma modeling | - |
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