Etch mechanism of Ba(2)Ti(9)O(20) dielectric thin film in inductively coupled Cl(2)/Ar plasma
- Authors
- Efremov, Alexander; Kim, Mansu; Min, Nam-Ki; Kwon, Kwang-Ho
- Issue Date
- 2008
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- Ba2Ti9O20; etch rate; dissociation; ionization; etch mechanism; Cl2/Ar plasma modeling
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.6, pp.D468 - D473
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 155
- Number
- 6
- Start Page
- D468
- End Page
- D473
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/125626
- DOI
- 10.1149/1.2899005
- ISSN
- 0013-4651
- Abstract
- An investigation of the Ba(2)Ti(9)O(20) (BTO) thin-film etch characteristics and mechanism in the Cl(2)/Ar inductively coupled plasma was carried out. The BTO etch rate as well as the BTO/Pt etch selectivity were measured as functions of Cl(2)/Ar mixing ratio (0-100% Ar), gas pressure (4-10 mTorr), input power (400-700 W), and bias power (50-300 W). A combination of plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling provided the information on plasma parameters, gas-phase compositions, and fluxes of active species on the etched surface. It was found that the behavior of the BTO etch rate corresponds to the reaction-rate-limited etch regime, when the etch rate is limited neither by physical sputtering of the main material nor by the ion-stimulated desorption of low volatile reaction products. (c) 2008 The Electrochemical Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.