Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
- Authors
- Yang, Yejin; Park, Young-Soo; Son, Jaemin; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 20-9월-2021
- Publisher
- NATURE PORTFOLIO
- Citation
- SCIENTIFIC REPORTS, v.11, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 11
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/136330
- DOI
- 10.1038/s41598-021-98182-7
- ISSN
- 2045-2322
- Abstract
- In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I-V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.