One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
- Authors
- Choi, Sangik; Son, Jaemin; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 9-9월-2021
- Publisher
- NATURE PORTFOLIO
- Citation
- SCIENTIFIC REPORTS, v.11, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 11
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/136371
- DOI
- 10.1038/s41598-021-97479-x
- ISSN
- 2045-2322
- Abstract
- In this study, we fabricated a 2 x 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 10(8) cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the "0" state and 6 nW for holding the "1" state. For a selected cell in the 2 x 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.
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