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A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

Authors
Kim, SooyeonYoon, DaekeunKim, JungsooYoo, JunghwanSong, KiryongRieh, Jae-Sung
Issue Date
2월-2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Oscillators; Metals; Harmonic analysis; Couplings; Ring oscillators; Power generation; Impedance; Sub-harmonic injection-locked oscillators; CMOS; sub-millimeter wave
Citation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.2, pp.309 - 313
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume
69
Number
2
Start Page
309
End Page
313
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/137514
DOI
10.1109/TCSII.2021.3103736
ISSN
1549-7747
Abstract
A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.
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Rieh, Jae Sung
공과대학 (전기전자공학부)
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