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Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
- Issue Date
- 1-Jun-2022
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Amorphous indium-tin-gallium-zinc-oxide; Hafnium oxide; Hafnium aluminum oxide; Hysteresis; Positive gate-bias stress; Negative gate-bias stress
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.143
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 143
- ISSN
- 1369-8001
- Abstract
- In this study, we investigated the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide thinfilm transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm(2)/V &.s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)