Improved threshold switching characteristics of vanadium oxide/ oxynitride-based multilayer selector in a cross-point array

Abstract

We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using highresolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-galliumzinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and > 106 AC cycles, an improved ON/OFF ratio (-67), a high switching speed (< 110 ns), and a rectification ratio of -1 x 103 when the read margin is 10%. (c) 2022 Elsevier B.V. All rights reserved.