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Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature.Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature.
- Alternative Title
- Nonvolatile Memory device using mobile protons via insertion hydrogen neutral beam treatment process at room temperature.
- Authors
- Hong MunPyo
- Issue Date
- 26-9월-2016
- Publisher
- Materials Research Society of Korea
- Citation
- ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology)
- Conference Name
- ICMAP2016(The 6th International Conference on Microelectronics and Plasma Technology)
- Place
- KO
- Conference Date
- 2016-09-26
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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