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Nano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room TemperatureNano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room Temperature
- Alternative Title
- Nano-Crystal Silicon and Amorphous Indium Gallium Zinc Oxide Base Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process during Normal Thin Film Transistor Process at Room Temperature
- Authors
- Hong MunPyo
- Issue Date
- 21-8월-2015
- Publisher
- KIDS,SID,KDIA
- Citation
- iMiD2015(The 15th International Meeting on Information Display)
- Conference Name
- iMiD2015(The 15th International Meeting on Information Display)
- Place
- KO
- Conference Date
- 2015-08-18
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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