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SCIESCOPUSKCI
Subthreshold swing characteristics of nanowire tunneling FETs with variation in gate coverage and channel diameter

Kim, Minsuk; Jeon, Youngin; Kim, Yoonjoong; Kim, Sangsig

ArticleIssue Date2015CitationCURRENT APPLIED PHYSICS, v.15, no.7, pp.780 - 783PublisherELSEVIER
SCIESCOPUS
Thermoelectric characteristics of Si nanowires transferred onto plastics in air

Choi, Jinyong; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2013CitationMICROELECTRONIC ENGINEERING, v.111, pp.126 - 129PublisherELSEVIER
SCIESCOPUS
Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions

Kim, Minsuk; Jeon, Youngin; Kim, Yoonjoong; Kim, Sangsig

ArticleIssue Date2015CitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.14, no.4, pp.633 - 637PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch

Lee, Myeongwon; Jeon, Youngin; Kim, Minsuk; Kim, Sangsig

ArticleIssue Date2015CitationJOURNAL OF APPLIED PHYSICS, v.117, no.22PublisherAMER INST PHYSICS
SCIESCOPUS
Investigation of addition of silicon on the electrical properties of low temperature solution processed SiInZnO thin film transistor

Choi, Jun Young; Kim, Sang Sig; Lee, Sang Yeol

ArticleIssue Date2015CitationJOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, v.74, no.2, pp.482 - 487PublisherSPRINGER
SCIESCOPUS
Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig

ArticleIssue Date2015CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p(+)-i-n(+) Nanowires by Dual-Top-Gate Voltage Modulation

Jeon, Youngin; Kim, Minsuk; Lim, Doohyeok; Kim, Sangsig

ArticleIssue Date2015CitationNANO LETTERS, v.15, no.8, pp.4905 - 4913PublisherAMER CHEMICAL SOC
SCIESCOPUS
Barrier Height at the Graphene and Carbon Nanotube Junction

Kim, Tae Geun; Kim, Un Jeong; Lee, Si Young; Lee, Young Hee; Yu, Yun Seop; Hwang, Sung Woo; Kim, Sangsig

ArticleIssue Date2014CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Resistive Switching Characteristics of HfO2-Based Memory Devices on Flexible Plastics

Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

ArticleIssue Date2014CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8191 - 8195PublisherAMER SCIENTIFIC PUBLISHERS
SCIESCOPUS
Electrical characteristics of flexible ZnO thin-film transistors annealed by microwave irradiation

Park, Sukhyung; Cho, Kyoungah; Yang, Kyungwhan; Kim, Sangsig

ArticleIssue Date2014CitationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.6PublisherA V S AMER INST PHYSICS
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