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Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions
- Authors
- Kim, Minsuk; Jeon, Youngin; Kim, Yoonjoong; Kim, Sangsig
- Issue Date
- Jul-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Dual function; impact ionization; integration; sub-60 mV/dec; tunneling
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.14, no.4, pp.633 - 637
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 14
- Number
- 4
- Start Page
- 633
- End Page
- 637
- ISSN
- 1536-125X
- Abstract
- Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio (I-on /I-off), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high I-on /I-off of similar to 10(11) and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)