Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET
- Authors
- Jung, Seung-Geun; Lee, Sul-Hwan; Kim, Choong-Ki; Yoo, Min-Soo; Yu, Hyun-Yong
- Issue Date
- Jun-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Stress; Degradation; Logic gates; MOSFET circuits; Quality of experience; Stress measurement; Random access memory; off-state stress; gidl-state stress; pMOSFET; interface trap; oxide charge trap; turn-around effect
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.41, no.6, pp.804 - 807
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 41
- Number
- 6
- Start Page
- 804
- End Page
- 807
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/55544
- DOI
- 10.1109/LED.2020.2989324
- ISSN
- 0741-3106
- Abstract
- The turn-around effect of drain linear current (I-dlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of I-dlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3.35% at 1000 s in the off-state stress. The turn-around effect is analyzed by comparing the degradation rates of the performance parameters (I-dlin, I-dsat, SS, and V-th) in the off -state and gate induced drain leakage (gidl) -state stress modes. The results indicate that the I-dlin turn-around effect in the off-state stress, which occurs as an effect of the negative oxide charge (Q(ox)) formation, is more significant than that of the interface trap (N-it) for short stress time (before 20 s), and the donor-like N-it formation has major effects compared to those of Q(ox) over a long stress time (after 20 s). This observation shows that the stress-induced trap generation can be investigated even if the protection diode exists and critically impacts the drain current degradation and should be seriously considered in the reliability of a DRAM circuit.
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