A 300-GHz High-Power High-Efficiency Voltage-Controlled Oscillator With Low Power Variation
- Authors
- Kim, Dongkyo; Jeon, Sanggeun
- Issue Date
- 5월-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- High-power source; InP double heterojunction bipolar transistor (DHBT); terahertz source; voltage-controlled oscillator (VCO)
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.5, pp.496 - 499
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 30
- Number
- 5
- Start Page
- 496
- End Page
- 499
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/56138
- DOI
- 10.1109/LMWC.2020.2986160
- ISSN
- 1531-1309
- Abstract
- This letter presents a 300-GHz voltage-controlled oscillator (VCO) with high output power and efficiency. The VCO core employs a differential Colpitts topology with inductive degeneration to facilitate a fundamental oscillation at 300 GHz. A common-base output buffer regulates the output power to minimize the power variation during the frequency tuning. The 300-GHz VCO is fabricated in a 130-nm InP double heterojunction bipolar transistor (DHBT) technology. The VCO exhibits a measured frequency tuning range of 9.9 GHz (294.9-304.8 GHz). The peak output power is measured to be 4.7 dBm at 297 GHz. The dc power consumption is 75.6 mW, leading to a high dc-to-RF conversion efficiency of 3.9%. The VCO output power is maintained nearly constant with only a 0.3-dB variation over the entire frequency tuning range. The phase noise is -86.6 dBc/Hz at 10-MHz offset frequency.
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