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Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
- Issue Date
- 23-1월-2020
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- gallium compounds; indium compounds; semiconductor thin films; II-VI semiconductors; conduction bands; thin film transistors; zinc compounds; amorphous semiconductors; tin compounds; thin-film transistors; positive gate bias stress; PBS; a-ITGZO TFT; electrical characteristics; a-ITGZO channel material; amorphous indium-tin-gallium-zinc-oxide thin-film transistors; subthreshold swing; threshold voltage; acceptor-like conduction band-tail states; donor-like Gaussian states; bandgap; voltage 183; 0 mV; voltage-0; 33 V; InSnGaZnO
- Citation
- ELECTRONICS LETTERS, v.56, no.2, pp.102 - 103
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 56
- Number
- 2
- Start Page
- 102
- End Page
- 103
- ISSN
- 0013-5194
- Abstract
- In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm(2)/V.s, subthreshold swing of 183 mV, threshold voltage of -0.33 V, and on/off ratio of 1.34 x 10(8). These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material.
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