Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
- Authors
- Lee, Byeong Hyeon; Lee, Doo-Yong; Lee, Ji Ye; Park, Sungkyun; Kim, Sangsig; Lee, Sang Yeol
- Issue Date
- Aug-2019
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nitrogen doping; Amorphous oxide semiconductor; Thin film transistor; SiInZnO
- Citation
- SOLID-STATE ELECTRONICS, v.158, pp.59 - 63
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 158
- Start Page
- 59
- End Page
- 63
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/63632
- DOI
- 10.1016/j.sse.2019.05.013
- ISSN
- 0038-1101
- Abstract
- Nitrogen-doped silicon indium zinc oxide (N-SIZO) thin film transistor (TFTs) were fabricated depending on nitrogen contents. It has been observed that nitrogen has substituted oxygen in N-SIZO system. Its electrical property and bias stability can be appropriately tuned by nitrogen-doping to reduce oxygen defect states. This change is mainly caused by the substitution of O atoms by N ones. As the N content increased, the peak related to the oxygen deficiency of XPS was systematically decreased. In addition, TLM analysis confirmed that the resistance increases steadily with increasing N content. Subthreshold swing (SS) was also improved by increasing nitrogen doping. This low SS means that the total trap state is decreased. As a result, it is confirmed that the negative bias stress (NBS) test shows stability as the N content increases.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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