Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
- Authors
- Shim, Jaewoo; Jang, Sung Woon; Lim, Ji-Hye; Kim, Hyeongjun; Kang, Dong-Ho; Kim, Kwan-Ho; Seo, Seunghwan; Heo, Keun; Shin, Changhwan; Yu, Hyun-Yong; Lee, Sungjoo; Ko, Dae-Hong; Park, Jin-Hong
- Issue Date
- 21-7월-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.11, no.27, pp.12871 - 12877
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 11
- Number
- 27
- Start Page
- 12871
- End Page
- 12877
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/64079
- DOI
- 10.1039/c9nr03441b
- ISSN
- 2040-3364
- Abstract
- Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe2) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe2) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe2), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator.
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