Investigation on dependency mechanism of inverter voltage gain on current level of photo stressed depletion mode thin-film transistors
- Authors
- Lee, Byeong Hyeon; Kim, Sangsig; Lee, Sang Yeol
- Issue Date
- 6월-2019
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v.156, pp.5 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 156
- Start Page
- 5
- End Page
- 11
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/64850
- DOI
- 10.1016/j.sse.2019.03.030
- ISSN
- 0038-1101
- Abstract
- The dependency of the inverter voltage gain on the current level (I-Level) of depletion mode (D-mode) thin-film transistors (TFTs) has been investigated with only n-type oxide semiconductor-based TFTs. It is clear that the voltage gain strongly depends on the D-mode I-Level. To investigate the dependency, photo stress was applied to the D-mode TFT to compare the inverter characteristics depending on the D-mode I-Level. As the photo stress time increased, the D-mode I-Level increased, and the voltage gains were degraded as a result. This was mainly because the I-Level of the D-mode is formed in the high section of the subthreshold slope (S.S) of the enhancement mode (E-mode) TFT when the photo stress was applied. By designing an inverter with a low D-mode I-Level, a high voltage gain of 9.85 was obtained at V-DD = 3 V. It is important to note that the S. S value of the E-mode and the I-Level of the D-mode should be optimized for high voltage gain for the application of next generation integrated circuits and highly sensitive photodetectors.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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