Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes
- Authors
- Oh, Sang Hoon; Lee, Tae Ho; Son, Kyung-Rock; Kim, Tae Geun
- Issue Date
- 30-1월-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Ultraviolet; Light-emitting diodes; Distributed Bragg reflector; Light extraction efficiency; Electrical breakdown process
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.773, pp.490 - 495
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 773
- Start Page
- 490
- End Page
- 495
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/68231
- DOI
- 10.1016/j.jallcom.2018.09.287
- ISSN
- 0925-8388
- Abstract
- Distributed Bragg reflector (DBR) has been used to enhance the performance of various optoelectronic devices because of its higher reflectance than metal reflector, particularly at a specific wavelength. However, the insulating property of the DBR structure have limited its use where the current injection is required (e.g., below electrodes). Here, we introduce a way to overcome this limit, by creating conductive paths in the DBR-electrode structure using an electrical breakdown process; thereby, achieving an ohmic contact with p-GaN contact layers, and finally apply to ultraviolet micro-light-emitting diodes (mu LEDs) to verify the validity of the method. Specifically, by inserting three pairs of TiO2/HfO2 -based conductive DBR structures under a Cr/Ni/Au-based p-type electrode, the reflectance of the p-type electrode was increased up to 95%, simultaneously increasing the output power of the mu LED by 5% by reducing the light absorption at the p-type electrode by the reflection of light without electrical losses. This approach is expected to offer a great flexibility in the design of conventional devices using DBR structures. (C) 2018 Elsevier B.V. All rights reserved.
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