Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes
- Issue Date
- 5-Dec-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- microscale light-emitting diodes; electrical doping treatment; silicon oxide; transmittance; hole injection; Schottky barrier height
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.40967 - 40972
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 48
- Start Page
- 40967
- End Page
- 40972
- ISSN
- 1944-8244
- Abstract
- Light extraction of microscale light-emitting diodes (mu LEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiOX) films as p-type contact electrodes for blue mu LEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiOX electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based mu LEDs.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)