Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes
- Authors
- Yoo, Seolhee; Kim, Sangsig; Song, Yong-Won
- Issue Date
- 1-11월-2018
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Black phosphorus; Field effect transistor; Contact printing; Lithography-free
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.86, pp.58 - 62
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 86
- Start Page
- 58
- End Page
- 62
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/71903
- DOI
- 10.1016/j.mssp.2018.06.010
- ISSN
- 1369-8001
- Abstract
- Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2 , BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 10(2) , similar to 130 cm(2)/Vs, and similar to 4.6 V/dec, respectively.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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