Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device

Abstract

A Pb(Zr0.52Ti0.48)O-3 (PZT) threshold-switching (TS) device with abrupt resistive switching (similar to 5 to 6 orders) at a threshold voltage of similar to 1.1 V and high off-state resistance (approximately 1 x 10(10)Omega) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of similar to 2 mV/decade at 300 K). Published by AIP Publishing.