Effect of physical densification on sub-gap density of states in amorphous InGaZnO thin films
- Authors
- Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 9월-2018
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- a-IGZO TFT; Deposition pressure; Film density; Density of states
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.121, pp.33 - 37
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 121
- Start Page
- 33
- End Page
- 37
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/73650
- DOI
- 10.1016/j.spmi.2018.07.021
- ISSN
- 0749-6036
- Abstract
- In this study, we investigate the relationship between the physical densification and sub-gap density-of-states (DOS) distribution of a-IGZO films prepared under various deposition pressures. For TFTs with a-IGZO channel films, the field effect mobility increases from 10.9 to 24.8 cm(2)/V.s, and the on-current increases from 1.5 to 20.8 mu A as the deposition pressure for the channel films decreases from 7 to 1 mTorr. The sub-gap DOS distributions obtained from the electrical characteristics indicate the changes in the density of accepter-like tail states with deposition pressure. Further, the physical densification of the channel films increases as the deposition pressure decreases. Our study demonstrates that the lower density of accepter-like tail states and the higher physical densification contribute to the improved performance of a-IGZO TFTs.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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