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Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods
- Issue Date
- 8월-2018
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Noise; Y-factor method; N-times power method; 65 nm CMOS; Low-noise amplifier
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.4, pp.536 - 540
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 18
- Number
- 4
- Start Page
- 536
- End Page
- 540
- ISSN
- 1598-1657
- Abstract
- A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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