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A SPICE model of silicon tunneling field-effect transistors
- Authors
- Woo, Sola; Kim, Minsuk; Kim, Sangsig
- Issue Date
- 5-5월-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Tunnel FET; Calibration; TCAD simulation; SPICE model; Device modeling
- Citation
- MICROELECTRONIC ENGINEERING, v.191, pp.66 - 71
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 191
- Start Page
- 66
- End Page
- 71
- ISSN
- 0167-9317
- Abstract
- In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model. (C) 2018 Elsevier B.V. All rights reserved.
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