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Silicon nanowire ratioed inverters on bendable substrates
- Issue Date
- May-2018
- Publisher
- TSINGHUA UNIV PRESS
- Keywords
- silicon nanowire; ratioed inverter; n-metal oxide semiconductor (MOS) inverter; p-MOS inverter; bendable substrate
- Citation
- NANO RESEARCH, v.11, no.5, pp.2586 - 2591
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO RESEARCH
- Volume
- 11
- Number
- 5
- Start Page
- 2586
- End Page
- 2591
- ISSN
- 1998-0124
- Abstract
- In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)