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Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs
- Issue Date
- 3월-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Compact model; FinFET; parasitic bipolar junction transistor (BJT) current; single-event transient (SET)
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.3, pp.866 - 870
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 65
- Number
- 3
- Start Page
- 866
- End Page
- 870
- ISSN
- 0018-9499
- Abstract
- A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and are verified through 3-D technology computer-aided design (TCAD) simulations. The results of the modeling show good agreement with the TCAD data, for both structural variations and energy variations of the energetic particles.
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